advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower on-resistance r ds(on) 6m rohs compliant & halogen-free i d 145a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.45 /w rthj-a maixmum thermal resistance, junction-ambient 6 2 /w data and specifications subject to change without n otice thermal data parameter storage temperature range total power dissipation 277.8 operating junction temperature range drain current, v gs @ 10v 3 total power dissipation 2 gate-source voltage + 20 drain current (chip) 145 120 pulsed drain current 1 480 drain current, v gs @ 10v parameter rating drain-source voltage 100 201402121 1 ap95t10agr-hf halogen-free product -55 to 150 90 -55 to 150 g d s ap95t10a series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-262 package is widely preferred for commercial-indu strial power applications and suited for low voltage applications such as dc/dc converters. g d s to-262(r)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =60a - - 6 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =60a - 127 - s i dss drain-source leakage current v ds =100v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 176 280 nc q gs gate-source charge v ds =80v - 30 - nc q gd gate-drain ("miller") charge v gs =10v - 80 - nc t d(on) turn-on delay time v ds =50v - 30 - ns t r rise time i d =40a - 100 - ns t d(off) turn-off delay time r g =3.3 - 90 - ns t f fall time v gs =10v - 100 - ns c iss input capacitance v gs =0v - 9090 14550 pf c oss output capacitance v ds =25v - 820 - pf c rss reverse transfer capacitance f=1.0mhz - 440 - pf r g gate resistance f=1.0mhz - 2 4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0v - 65 - ns q rr reverse recovery charge di/dt=100a/s - 170 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 120a. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap95t10agr-hf
ap95t10agr-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-r esistance temperature v.s. junction tempe rature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 100 200 300 400 500 600 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 25 o c 10v 9.0v 8.0v 7.0v v gs =6.0v 0 60 120 180 240 300 0 4 8 12 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 9.0v 8.0v 7.0v v gs =6.0v 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =60a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma i d =1ma
ap95t10agr-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. case temperat ure 4 0 2 4 6 8 10 12 0 40 80 120 160 200 240 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 40 a v ds =80v 0 4000 8000 12000 0 20 40 60 80 100 120 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 50 100 150 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) limited by package 0 50 100 150 200 250 300 0 2 4 6 8 10 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -40 o c
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